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MxRAM LLC offers the highest quality, longest life, next generation memory for the future of storage class memory.
Our proven technology will revolutionize Cloud computing, consumer data storage, and computational performance.
Our patented read technology allows MGRAM to read and write with minimal power consumption and cell destruction.
Our groundbreaking memory cell utilizes the hall effect to read and write data.
Data is stored in a magnetic alloy for long life and long term data retention, and passively read using our patented method. This approach yields strong state signals which can be quickly and positively read without destroying the original data. Further, the memory never requires refreshing, or re-writing leaving you with the confidence that your data will be there when you need it.
MXRAM holds a patent for tri-state memory, which means the memory cell can hold 3 states. What does this mean for storage and performance SSDs made from MGRAM will hold 50% more data, while being 10% faster than current Flash memory on the market.
The best part? Our patented passive read technology allows us to detect the state of the bit with out degrading it. Meaning MGRAM will last longer than any memory technology ever brought to market.
Compared to alternative storage, Flash SSD and HDD, MGRAM SSDs outperform at every benchmark including speed, capacity, reliability, and cost to consumers. All this while consuming an astonishingly low amount of power. Did we also mention it is radiation proof?
Imagine the implications of a single block of memory serving as BIOS, RAM, and Hard Drive. MGRAM has the potential to change the future of computing.
